BC639 Datasheet | Fairchild Semiconductor

BC635/637/639 BC635/637/639 Switching and Amplifier Applications - plement to BC636/638/640 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCER Collector-Emitter Voltage at RBE=1KΩ : BC635 : BC637 : BC639 VCES Collector-Emitter Voltage : BC635 : BC637 : BC639 VCEO Collector-Emitter Voltage : BC635 : BC637 : BC639 VEBO Emitter-Base Voltage IC Collector Current ICP Peak Collector Current IB Base Current PC Collector Power Dissipation TJ Junction Temperature TSTG Storage Temperature - PW=5ms, Duty Cycle=10% Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition BVCEO Collector-Emitter Breakdown Voltage : BC635 : BC637 : BC639 IC=10m A, IB=0 ICBO IEBO h FE1 h FE2 h FE3 VCE(sat) VBE(on) f T Collector Cut-off Current Emitter Cut-off Current DC Current Gain : All : BC635 : BC637/BC639 : All Collector-Emitter Saturation Voltage Base-Emitter On...