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BC639 - NPN EPITAXIAL SILICON TRANSISTOR

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Datasheet Details

Part number BC639
Manufacturer Fairchild Semiconductor
File Size 53.47 KB
Description NPN EPITAXIAL SILICON TRANSISTOR
Datasheet download datasheet BC639 Datasheet
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BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCER Collector-Emitter Voltage at RBE=1KΩ : BC635 : BC637 : BC639 VCES Collector-Emitter Voltage : BC635 : BC637 : BC639 VCEO Collector-Emitter Voltage : BC635 : BC637 : BC639 VEBO Emitter-Base Voltage IC Collector Current ICP Peak Collector Current IB Base Current PC Collector Power Dissipation TJ Junction Temperature TSTG Storage Temperature • PW=5ms, Duty Cycle=10% Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition BVCEO Collector-Emitter Breakdown Voltage : BC635 : BC637 : BC639 IC=10mA, IB=0 ICBO IEBO hFE1 hFE2 hFE3 VCE(
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